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MDD(Microdiode Semiconductor) BSS138W product image
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MDD(Microdiode Semiconductor) BSS138WRoHS

Manufacturer
MDD(Microdiode Semiconductor)Asian Brands
MPN
BSS138W
LCSC Part #
C53069222
Packaging
SOT-323
Customer #
Key Attributes
300mW 60V 300mA 1V 1.8Ω@10V 1 N-channel N-Channel SOT-323 Single FETs, MOSFETs RoHS
Datasheetpdf iconMDD(Microdiode Semiconductor) BSS138W
In-Stock: 2,750
2,750 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
50+$ 0.0169$ 0.85
500+$ 0.0131$ 6.55
3,000+$ 0.0111$ 33.30
6,000+$ 0.0098$ 58.80
24,000+$ 0.0087$ 208.80
51,000+$ 0.0081$ 413.10
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMDD(Microdiode Semiconductor)
PackagingSOT-323
Output Capacitance(Coss)7pF
Pd - Power Dissipation300mW
Drain to Source Voltage60V
Configuration-
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
RDS(on)1.8Ω@10V
Reverse Transfer Capacitance (Crss@Vds)3pF
Number1 N-channel
Input Capacitance(Ciss)25pF
Gate Charge(Qg)1.8nC
Vgs±20V
TypeN-Channel
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Additional Information

TypeDetails
Minimum50
Multiple50
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

This 60V N-channel MOSFET is based on a unique device design, achieving low on-resistance (RDson), fast switching, and good ESD rating performance.

Features

AI Translation
  • Drain-source voltage (VDS) = 60V, drain current (ID) = 0.3A, gate-source voltage (VGS) = 10V; typical on-resistance (RDS(on)) = 1.8Ω
  • Excellent RDS(on) and maximum DC current capability
  • Compliant with JESD22-A114-B human body model, ESD Class 2

Applications

AI Translation
  • Load switch for portable devices
  • Battery-powered systems
  • DC-DC converters
  • LCD display inverters