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HGSEMI NE5532DQ3/TR product image
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HGSEMI NE5532DQ3/TRRoHS

Manufacturer
HGSEMIAsian Brands
MPN
NE5532DQ3/TR
LCSC Part #
C52160367
Packaging
DFN-8(3x3)
Customer #
Key Attributes
2 500uV 11V/us 100dB 30nA 10MHz DFN-8(3x3) Instrumentation, Op Amps, Buffer Amps RoHS
Datasheetpdf iconHGSEMI NE5532DQ3/TR
In-Stock: 4,390
4,390 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.116$ 0.58
50+$ 0.0922$ 4.61
150+$ 0.0802$ 12.03
500+$ 0.0713$ 35.65
2,500+$ 0.0641$ 160.25
5,000+$ 0.0606$ 303.00
Standard Packaging5000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Linear/Amplifiers/Instrumentation, Op Amps, Buffer Amps
ManufacturerHGSEMI
PackagingDFN-8(3x3)
Number of Channels2
Vos - Input Offset Voltage500uV
Slew Rate11V/us
Input Offset Current(Ios)5nA
Input offset current drift(Ios TC)-
Operating Temperature0℃~+70℃
FeaturesBuilt-in compensation
Common Mode Rejection Ratio(CMRR)100dB
Ib - Input Bias Current30nA
Output Current-
Maximum Power Supply Range (Vdd-Vss)-
Input Offset Voltage Drift(Vos TC)-
Quiescent Current-
Gain Bandwidth Product10MHz
Input Voltage Noise Density8nV/√Hz@1kHz
Dual Supply-
Rail to Rail-
Single Supply-
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

NE5532/SA5532 contains two independent, internally frequency-compensated low-noise dual op-amps. The device features high slew rate and low output noise characteristics.

Features

AI Translation
  • Internal frequency compensation
  • High DC voltage gain (approx. 100 dB)
  • High slew rate (typical 10 V/μs)
  • Input noise voltage 8 nV/√Hz (f0 = 1 kHz)