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MDD(Microdiode Semiconductor) MDD50P02Q product image
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MDD(Microdiode Semiconductor) MDD50P02QRoHS

Manufacturer
MDD(Microdiode Semiconductor)Asian Brands
MPN
MDD50P02Q
LCSC Part #
C50176501
Packaging
PDFN-8L(3x3)
Customer #
Key Attributes
MOSFET P-CH 20V 50A PDFN-8L(3x3)
Datasheetpdf iconMDD(Microdiode Semiconductor) MDD50P02Q
In-Stock: 1,350
1,350 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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QtyUnit PriceTotal Amount
5+$ 0.1186$ 0.59
50+$ 0.0955$ 4.78
150+$ 0.084$ 12.60
500+$ 0.0753$ 37.65
2,500+$ 0.0588$ 147.00
5,000+$ 0.0553$ 276.50
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerMDD(Microdiode Semiconductor)
PackagingPDFN-8L(3x3)
Drain to Source Voltage20V
Current - Continuous Drain(Id)50A
Output Capacitance(Coss)400pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation60W
RDS(on)6.2mΩ@4.5V;8mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)356pF
Number1 P-Channel
Input Capacitance(Ciss)3.845nF
Gate Charge(Qg)50nC@4V
TypeP-Channel
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Introduction

AI Translation

This P-channel MOSFET is manufactured using MDD's advanced power trench technology. The process is optimized to minimize on-resistance while maintaining superior switching performance through a best-in-class soft body diode.

Features

AI Translation
  • Maximum R DS(on) = 8.5mΩ at V GS = -4.5 V, I D = -12 A
  • Ultra-low reverse recovery charge Q g
  • 100% UIS tested
  • 100% dV DS tested

Applications

AI Translation
  • Power management in telecom and industrial automation
  • Motor drives and uninterruptible power supplies
  • Current switching in DC/DC and AC/DC (SR) subsystems