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HGSEMI AT24C128BN product image
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HGSEMI AT24C128BNRoHS

Manufacturer
HGSEMIAsian Brands
MPN
AT24C128BN
LCSC Part #
C41415959
Packaging
DIP-8
Customer #
Key Attributes
128Kbit I2C Compatible Serial EEPROM
Datasheetpdf iconHGSEMI AT24C128BN
In-Stock: 1,995
1,995 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.1876$ 0.94
50+$ 0.1473$ 7.37
150+$ 0.13$ 19.50
500+$ 0.1085$ 54.25
2,500+$ 0.0989$ 247.25
5,000+$ 0.0932$ 466.00
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerHGSEMI
PackagingDIP-8
Voltage - Supply1.7V~5.5V
Memory Size128Kbit
Operating temperature-40℃~+85℃
Clock Frequency1MHz
FeaturesHardware write protection function;Built-in power-on reset (POR);Noise suppression function
Data Retention - TDR (Year)100 Years
Write Cycle Time(tWC)5ms
Write Cycle Endurance1,000,000 cycles
InterfaceI2C

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

AT24C128B is a standalone |2C compatible Serial EEPROM chip. The total memory array density is 128K bits, which is composed of 256 pages with 64 bytes per page.

Features

AI Translation
  • Single supply voltage and high speed: − 1 MHz clock from 1.7 V to 5.5 V
  • Operating Temperature range: − 40℃ to +85℃
  • Compatible with all |²C bus mode: − 100kHz − 400kHz, − 1MHz
  • Memory Array: − 128Kbit EEPROM − 256 Pages − Page size: 64 byte
  • Schmitt Trigger based noise filter for input noise suppression
  • Current, Random and Sequential Read modes
  • Write Operations: − Byte write within 5 ms − Page write within 5 ms − Partial Page-writes support − Self-Timed Write Cycle
  • Hardware write protection for the whole memory array
  • ESD: HBM up to 4KV
  • High Reliability: − More than 1 million Write Endurance Cycles − More than 100 years Data Retention
  • Package:SOP-8, TSSOP-8, DFN-8, DIP-8, MSOP-8, SOT-23-5