MDD(Microdiode Semiconductor) 2N7002K
| Manufacturer | MDD(Microdiode Semiconductor)Asian Brands |
| MPN | 2N7002K |
| LCSC Part # | C414015 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 300mA SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 9pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -40℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 1.9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 21pF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power medium-voltage MOSFET technology
- Voltage-controlled small-signal switch
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- ESD protection up to 2KV (Human Body Model HBM)
Applications
AI Translation
- Battery-powered systems
- Solid-state relays
- Direct logic-level interface: TTL/CMOS
In-Stock: 3,019,100
3,019,100 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 50+ | $ 0.0141 | $ 0.71 |
| 500+ | $ 0.0117 | $ 5.85 |
| 3,000+ | $ 0.0081 | $ 24.30 |
| 6,000+ | $ 0.0073 | $ 43.80 |
| 24,000+ | $ 0.007 | $ 168.00 |
| 51,000+ | $ 0.0067 | $ 341.70 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MDD(Microdiode Semiconductor) | |
| Packaging | SOT-23 | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 9pF | |
| Current - Continuous Drain(Id) | 300mA | |
| Operating Temperature - | -40℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 300mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| RDS(on) | 1.9Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 21pF | |
| Gate Charge(Qg) | - |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 50 |
| Multiple | 50 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Trench power medium-voltage MOSFET technology
- Voltage-controlled small-signal switch
- Low input capacitance
- Fast switching speed
- Low input/output leakage current
- ESD protection up to 2KV (Human Body Model HBM)
Applications
AI Translation
- Battery-powered systems
- Solid-state relays
- Direct logic-level interface: TTL/CMOS
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
