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MDD(Microdiode Semiconductor) MMBT5551-E product image
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MDD(Microdiode Semiconductor) MMBT5551-ERoHS

Manufacturer
MPN
MMBT5551-E
LCSC Part #
C41371418
Packaging
SOT-23
Customer #
Key Attributes
TRANS NPN 160V 0.6A SOT-23
Datasheetpdf iconMDD(Microdiode Semiconductor) MMBT5551-E

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
ManufacturerMDD(Microdiode Semiconductor)
PackagingSOT-23
Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO6V
DC Current Gain300
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • Complementary to MMBT5401
  • Ideal for Medium Power Amplification and Switching
In-Stock: 344,690
344,690 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0106$ 0.0102$ 0.10
100+$ 0.0087$ 0.0084$ 0.84
300+$ 0.0077$ 0.0074$ 2.22
3,000+$ 0.0065$ 0.0063$ 18.90
6,000+$ 0.006$ 0.0058$ 34.80
9,000+$ 0.0057$ 0.0055$ 49.50
Standard Packaging3000/Full Reel
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