NCE NCE60P04R
| Manufacturer | NCEAsian Brands |
| MPN | NCE60P04R |
| LCSC Part # | C502855 |
| Packaging | SOT-223-3L |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 4.3A SOT-223-3L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | SOT-223-3L | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 3.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 930pF | |
| Gate Charge(Qg) | 25nC@30V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for use as a load switch or in PWM applications.
Features
AI Translation
- VDS = -60V, ID = -4.3A
- RDS(ON) < 120mΩ @ VGS = -10V
- RDS(ON) < 170mΩ @ VGS = -4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
Applications
AI Translation
- Load switch
- PWM application
In-Stock: 13,030
13,030 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2422 | $ 1.21 |
| 50+ | $ 0.1919 | $ 9.60 |
| 150+ | $ 0.1703 | $ 25.55 |
| 500+ | $ 0.1434 | $ 71.70 |
| 2,500+ | $ 0.1314 | $ 328.50 |
| 5,000+ | $ 0.1242 | $ 621.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | SOT-223-3L | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 4.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 3.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 120mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 930pF | |
| Gate Charge(Qg) | 25nC@30V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for use as a load switch or in PWM applications.
Features
AI Translation
- VDS = -60V, ID = -4.3A
- RDS(ON) < 120mΩ @ VGS = -10V
- RDS(ON) < 170mΩ @ VGS = -4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
Applications
AI Translation
- Load switch
- PWM application
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
