- Pinout Diagram
- Footprint Diagram
onsemi NDS331N
| Manufacturer | |
| MPN | NDS331N |
| LCSC Part # | C192741 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 1.3A SOT-23 |
| Datasheet |  onsemi NDS331N |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| RDS(on) | 160mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 162pF | |
| Gate Charge(Qg) | 3.5nC@5V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
- These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology
- This very high density process is especially tailored to minimize onstate resistance
- 1.3 A, 20 V
- RDS(ON)=0.21 Ω @ VGS = 2.7 V
- RDS(ON)=0.16 Ω @ VGS = 4.5 V
- Industry standard outline SOT - 23 surface mount package using proprietary SuperSOT - 3 design for superior thermal and electrical capabilities
- High density cell design for extremely low RDS(ON)
- Exceptional on - resistance and maximum DC current capability
Applications
- notebook computers
- portable phones
- PCMCIA cards
- other battery powered circuits
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1679 | $ 0.84 |
| 50+ | $ 0.1311 | $ 6.56 |
| 150+ | $ 0.1154 | $ 17.31 |
| 500+ | $ 0.0957 | $ 47.85 |
| 3,000+ | $ 0.087 | $ 261.00 |
| 6,000+ | $ 0.0817 | $ 490.20 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 1.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF | |
| RDS(on) | 160mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 162pF | |
| Gate Charge(Qg) | 3.5nC@5V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
- These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology
- This very high density process is especially tailored to minimize onstate resistance
- 1.3 A, 20 V
- RDS(ON)=0.21 Ω @ VGS = 2.7 V
- RDS(ON)=0.16 Ω @ VGS = 4.5 V
- Industry standard outline SOT - 23 surface mount package using proprietary SuperSOT - 3 design for superior thermal and electrical capabilities
- High density cell design for extremely low RDS(ON)
- Exceptional on - resistance and maximum DC current capability
Applications
- notebook computers
- portable phones
- PCMCIA cards
- other battery powered circuits
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |