NTE Electronics NTE457
| Manufacturer | |
| MPN | NTE457 |
| LCSC Part # | C17426647 |
| Packaging | TO-92 |
| Customer # | |
| Key Attributes | 310mW 1 N-channel 1mA TO-92 JFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 4.5pF | |
| Pd - Power Dissipation | 310mW | |
| Operating Temperature | - | |
| Number | 1 N-channel | |
| Drain Current (Idss) | 1mA | |
| Reverse Transfer Capacitance (Crss) | 1.5pF | |
| Configuration | - | |
| RDS(on) | - | |
| Gate-Source Breakdown Voltage (Vgss) | - | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 500mV |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Drain-Source Voltage VDS: 25V
- Drain-Gate Voltage VDG: 25V
- Reverse Gate-Source Voltage VGS(R): -25V
- Gate Current |IG|: 10mA
- Total Device Dissipation (TA = +25°C) PD: 310mW, Derate 2.82mW/°C above 25°C
- Operating Junction Temperature TJ: +125°C
- Storage Temperature Range TStg: -65°C to +150°C
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.3611 | $ 3.36 |
| 200+ | $ 1.342 | $ 268.40 |
| 500+ | $ 1.2966 | $ 648.30 |
| 1,000+ | $ 1.2739 | $ 1273.90 |
Standard Packaging25/Full Bag | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/JFETs | |
| Manufacturer | NTE Electronics | |
| Packaging | TO-92 | |
| FET Type | N-Channel | |
| Ciss-Input Capacitance | 4.5pF | |
| Pd - Power Dissipation | 310mW | |
| Operating Temperature | - | |
| Number | 1 N-channel | |
| Drain Current (Idss) | 1mA | |
| Reverse Transfer Capacitance (Crss) | 1.5pF | |
| Configuration | - | |
| RDS(on) | - | |
| Gate-Source Breakdown Voltage (Vgss) | - | |
| Output Capacitance(Coss) | - | |
| Gate-Source Cutoff Voltage (VGS(off)) | 500mV |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Drain-Source Voltage VDS: 25V
- Drain-Gate Voltage VDG: 25V
- Reverse Gate-Source Voltage VGS(R): -25V
- Gate Current |IG|: 10mA
- Total Device Dissipation (TA = +25°C) PD: 310mW, Derate 2.82mW/°C above 25°C
- Operating Junction Temperature TJ: +125°C
- Storage Temperature Range TStg: -65°C to +150°C
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

