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PANJIT 2N7002DW_R1_00001 product image
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PANJIT 2N7002DW_R1_00001RoHS

Manufacturer
PANJITAsian Brands
MPN
2N7002DW_R1_00001
LCSC Part #
C304051
Packaging
SOT-363
Customer #
Key Attributes
N-Channel, Id:115mA, Vdss:60V
Datasheetpdf iconPANJIT 2N7002DW_R1_00001
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QtyUnit Price(Reference Only)Total Amount
10+$ 0.0504$ 0.50
100+$ 0.0406$ 4.06
300+$ 0.0356$ 10.68
3,000+$ 0.0299$ 89.70
6,000+$ 0.0269$ 161.40
9,000+$ 0.0254$ 228.60
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerPANJIT
PackagingSOT-363
Drain to Source Voltage60V
Current - Continuous Drain(Id)115mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)5Ω@10V
Number2 N-Channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)700pC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Features

AI Translation
  • RDS(ON) = 5 Ω at VGS = 10 V, IDS = 500 mA
  • RDS(ON) = 7.5 Ω at VGS = 4.5 V, IDS = 75 mA
  • Advanced trench process technology
  • High-density cell design for ultra-low on-resistance
  • Designed for battery-powered systems and solid-state relay drivers: suitable for relays, displays, lamps, solenoids, memory, etc.
  • Compliant with EU RoHS Directive 2002/95/EC