Qorvo UJ3N120065K3S

UnitedSiC offers high-performance G3 silicon carbide normally-on JFET transistors. This series features ultra-low on-resistance (RDS(ON)) and gate charge (QG), enabling low conduction and switching losses. The devices exhibit normally-on characteristics with low RDS(ON) at VGS = 0V, making them well-suited for current protection circuits requiring no active control as well as cascode operation.

• Typical on-resistance RDS(on),typ of 66mΩ
• Voltage-controlled
• Maximum operating temperature of 175°C
• Very fast switching speed, independent of temperature
• Low gate charge
• Low intrinsic capacitance
• RoHS compliant

Overcurrent protection circuit, DC-AC inverter, switching mode power supply, power factor correction module, motor drive