SAMSUNG K4B4G1646E-BYKO

Manufacturer	SAMSUNG
MPN	K4B4G1646E-BYKO
LCSC Part #	C2803247
Packaging	FBGA-96(3.1x16)
Customer #
Key Attributes	4Gbit 1.35V~1.5V 933MHz DDR3L SDRAM FBGA-96(3.1x16) Memory (ICs) RoHS
Datasheet	SAMSUNG K4B4G1646E-BYKO

Products Specifications

Type	Description	All
Category	Integrated Circuits (ICs)/Memory/Memory (ICs)
Manufacturer	SAMSUNG
Packaging	FBGA-96(3.1x16)
Refresh Current	-
Memory Size	4Gbit
Voltage - Supply	1.35V~1.5V
Operating temperature	0℃~+95℃
Clock Frequency	933MHz
Features	Auto precharge function;Asynchronous reset function;Data mask function;ZQ calibration function;Dynamic on-chip termination
Memory Format	DDR3L SDRAM
Current - Supply	-

AI Translation

JEDEC standard 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
VDDO = 1.35V(1.28V~1.45V) & 1.5V(1.425V~1.575V)
400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin 933MHz fCK for 1866Mb/sec/pin
8 Banks
Programmable CAS Latency(posted CAS): 5,6,7,8,9,10,11,12,13
Programmable Additive Latency: 0, CL - 2 or CL - 1 clock
Programmable CAS Write Latency (CWL) = 5 (DDR3 - 800), 6 (DDR3 - 1066), 7 (DDR3 - 1333), 8 (DDR3 - 1600) and 9(DDR3 - 1866)
8 - bit pre - fetch
Burst Length: 8, 4 with ICCD = 4 which does not allow seamless read or write [either On the fly using A12 or MRS]
Bi - directional Differential Data - Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ:240 ohm±1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85℃, 3.9us at 85℃ < TCASE

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