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Infineon/CYPRESS CY62157EV30LL-45ZSXI product image
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Infineon/CYPRESS CY62157EV30LL-45ZSXIRoHS

Manufacturer
Infineon/CYPRESS
MPN
CY62157EV30LL-45ZSXI
LCSC Part #
C511145
Packaging
TSOPII-44-10.2mm
Customer #
Key Attributes
8Mbit 2.2V~3.6V Parallel Port (Parallel) TSOPII-44-10.2mm Memory (ICs) RoHS
Datasheetpdf iconInfineon/CYPRESS CY62157EV30LL-45ZSXI
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QtyUnit Price(Reference Only)Total Amount
1+$ 5.5293$ 5.53
10+$ 5.4064$ 54.06
30+$ 5.3234$ 159.70
100+$ 5.242$ 524.20
Standard Packaging270/Full Tray
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerInfineon/CYPRESS
PackagingTSOPII-44-10.2mm
Memory Size8Mbit
Voltage - Supply2.2V~3.6V
Operating temperature-40℃~+85℃
Access Time45ns
FeaturesAuto power-down function
Current - Supply25mA
Standby Supply Current8uA
InterfaceParallel Port (Parallel)
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging270
Sales UnitPiece

Introduction

AI Translation

The CY62157EV30 is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL (oplus)) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1 (overline) HIGH or CE2 LOW or both BHE and BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (CE1 HIGH or CE2 LOW), the outputs are disabled (OE (overline) HIGH), Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or a write operation is active (CE1 LOW, CE2 HIGH and WE LOW).

Features

AI Translation
  • Thin small outline package (TSOP) I package configurable as 512K x 16 or 1M x 8 static RAM (SRAM)
  • High speed: 45 ns
  • Temperature ranges
    • Industrial: -40 ℃ to +85 ℃
    • Automotive-A: -40 ℃ to +85 ℃
    • Automotive-E: -40 ℃ to +125 ℃
  • Wide voltage range: 2.20 V to 3.60 V
  • Pin compatible with CY62157DV30
  • Ultra low standby power
    • Typical standby current: 2 μA
    • Maximum standby current: 8 μA (Industrial)
  • Ultra low active power
    • Typical active current: 6 mA at f = 1 MHz
  • Easy memory expansion with CE1 (overline), CE2, and OE (overline) features
  • Automatic power down when deselected
  • Complementary Metal Oxide Semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA), Pb-free 44-pin thin small outline package (TSOP) II and 48-pin TSOP I packages