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onsemi CAV25M01VE-GT3 product image
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onsemi CAV25M01VE-GT3RoHS

Manufacturer
onsemi
MPN
CAV25M01VE-GT3
LCSC Part #
C605359
Packaging
SOIC-8
Customer #
Key Attributes
2.5V~5.5V 1Mbit 10MHz SPI SOIC-8 Memory (ICs) RoHS
Datasheetpdf icononsemi CAV25M01VE-GT3
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QtyUnit Price(Reference Only)Total Amount
1+$ 2.2068$ 2.21
10+$ 2.1551$ 21.55
30+$ 2.1212$ 63.64
100+$ 2.0873$ 208.73
Standard Packaging3000/Full Reel
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
Manufactureronsemi
PackagingSOIC-8
Voltage - Supply2.5V~5.5V
Memory Size1Mbit
Operating temperature-40℃~+125℃
Clock Frequency10MHz
FeaturesHardware write protection function;Built-in power-on reset (POR);Built-in error correction code (ECC) function;Built-in write enable latch (WEL);Software write protection function
Data Retention - TDR (Year)100 Years
Write Cycle Time(tWC)5ms
Write Cycle Endurance1,000,000 cycles
InterfaceSPI
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The CAV25M01 is a EEPROM Serial 1−Mb SPI Automotive Grade 1 device internally organized as 128Kx8 bits. This features a 256−byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAV25M01 device. The device features software and hardware write protection, including partial as well as full array protection. On−Chip ECC (Error Correction Code) makes the device suitable for high reliability applications.

Features

AI Translation
  • Automotive AEC−Q100 Grade 1 ( -40℃ to +125℃ Qualified
  • 10 MHz SPI Compatible
  • 2.5 V to 5.5 V Supply Voltage Range
  • SPI Modes (0,0) & (1,1)
  • 256−byte Page Write Buffer
  • Additional Identification Page with Permanent Write Protection
  • Self−timed Write Cycle
  • Hardware and Software Protection
  • Block Write Protection – Protect 1/4, 1/2 or Entire EEPROM Array
  • Low Power CMOS Technology
  • 1,000,000 Program/Erase Cycles
  • 100 Year Data Retention
  • 8 lead SOIC, TSSOP and WLCSP Packages
  • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant