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onsemi BDX53CGRoHS

Manufacturer
MPN
BDX53CG
LCSC Part #
C605322
Packaging
TO-220
Customer #
Key Attributes
100V 750 NPN 8A TO-220 Single Bipolar Transistors RoHS
Datasheetpdf icononsemi BDX53CG
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.0849$ 1.08
10+$ 1.0616$ 10.62
30+$ 1.046$ 31.38
100+$ 0.9805$ 98.05
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors
Manufactureronsemi
PackagingTO-220
Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
DC Current Gain750
Pd - Power Dissipation65W
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))2V
Operating Temperature-65℃~+150℃@(Tj)

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

These devices are designed for general-purpose amplifier and low-speed switching applications.

Features

AI Translation
  • High DC Current Gain — h_FE = 2500 (typ) at I_C = 4.0 Adc
  • Collector-Emitter Sustaining Voltage — at 100 mAADC
    • V_CEO(sus) = 80 Vdc (min) — BDX53B, 54B
    • V_CEO(sus) = 100 Vdc (min) — BDX53C, 54C
  • Low Collector-Emitter Saturation Voltage —
    • V_CE(sat) = 2.0 Vdc (max) at I_C = 3.0 Adc
    • V_CE(sat) = 4.0 Vdc (max) at I_C = 5.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • These devices are lead-free and RoHS compliant*

Applications

AI Translation
  • General-purpose amplifier
  • Low-speed switching applications