onsemi BDX53CG
| Manufacturer | |
| MPN | BDX53CG |
| LCSC Part # | C605322 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 100V 750 NPN 8A TO-220 Single Bipolar Transistors RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 750 | |
| Pd - Power Dissipation | 65W | |
| type | NPN | |
| Current - Collector(Ic) | 8A | |
| Vce Saturation(VCE(sat)) | 2V | |
| Operating Temperature | -65℃~+150℃@(Tj) |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are designed for general-purpose amplifier and low-speed switching applications.
Features
AI Translation
- High DC Current Gain — h_FE = 2500 (typ) at I_C = 4.0 Adc
- Collector-Emitter Sustaining Voltage — at 100 mAADC
- V_CEO(sus) = 80 Vdc (min) — BDX53B, 54B
- V_CEO(sus) = 100 Vdc (min) — BDX53C, 54C
- Low Collector-Emitter Saturation Voltage —
- V_CE(sat) = 2.0 Vdc (max) at I_C = 3.0 Adc
- V_CE(sat) = 4.0 Vdc (max) at I_C = 5.0 Adc
- Monolithic Construction with Built-In Base-Emitter Shunt Resistor
- These devices are lead-free and RoHS compliant*
Applications
AI Translation
- General-purpose amplifier
- Low-speed switching applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.0849 | $ 1.08 |
| 10+ | $ 1.0616 | $ 10.62 |
| 30+ | $ 1.046 | $ 31.38 |
| 100+ | $ 0.9805 | $ 98.05 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | TO-220 | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 100V | |
| DC Current Gain | 750 | |
| Pd - Power Dissipation | 65W | |
| type | NPN | |
| Current - Collector(Ic) | 8A | |
| Vce Saturation(VCE(sat)) | 2V | |
| Operating Temperature | -65℃~+150℃@(Tj) |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These devices are designed for general-purpose amplifier and low-speed switching applications.
Features
AI Translation
- High DC Current Gain — h_FE = 2500 (typ) at I_C = 4.0 Adc
- Collector-Emitter Sustaining Voltage — at 100 mAADC
- V_CEO(sus) = 80 Vdc (min) — BDX53B, 54B
- V_CEO(sus) = 100 Vdc (min) — BDX53C, 54C
- Low Collector-Emitter Saturation Voltage —
- V_CE(sat) = 2.0 Vdc (max) at I_C = 3.0 Adc
- V_CE(sat) = 4.0 Vdc (max) at I_C = 5.0 Adc
- Monolithic Construction with Built-In Base-Emitter Shunt Resistor
- These devices are lead-free and RoHS compliant*
Applications
AI Translation
- General-purpose amplifier
- Low-speed switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



