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MICROCHIP AT45DB081D-MU-2.5 product image
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MICROCHIP AT45DB081D-MU-2.5RoHS

Manufacturer
MPN
AT45DB081D-MU-2.5
LCSC Part #
C184688
Packaging
WDFN-8-EP(5x6)
Customer #
Key Attributes
8Mbit 2.5V~3.6V 66MHz SPI WDFN-8-EP(5x6) Memory (ICs) RoHS
Datasheetpdf iconMICROCHIP AT45DB081D-MU-2.5
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.7708$ 1.77
10+$ 1.5194$ 15.19
30+$ 1.362$ 40.86
100+$ 1.2016$ 120.16
490+$ 1.1276$ 552.52
980+$ 1.0967$ 1074.77
1,960+$ 1.0844$ 2125.42
3,920+$ 1.0751$ 4214.39
Standard Packaging490/Full Tray
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Products Specifications

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TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory (ICs)
ManufacturerMICROCHIP
PackagingWDFN-8-EP(5x6)
Memory Size8Mbit
Voltage - Supply2.5V~3.6V
Operating temperature-40℃~+85℃
Program / Erase Cycles100,000 cycles
Clock Frequency66MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Page Programming Time (Tpp)2ms
Standby Supply Current25uA
InterfaceSPI

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging490
Sales UnitPiece

Introduction

AI Translation

A 2.5V or 2.7V, serial-interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. Supports RapidS serial interface for applications requiring very high speed operations. RapidS serial interface is SPI compatible for frequencies up to 66MHz. Its 8,650,752-bits of memory are organized as 4,096 pages of 256-bytes or 264-bytes each. Contains two SRAM buffers of 256-/264-bytes each. Allows receiving of data while reprogramming the Flash Array, as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three step read-modify-write operation. Uses a RapidS serial interface to sequentially access its data, reducing active pin count, facilitating hardware layout, increasing system reliability, minimizing switching noise, and reducing package size. Optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage and low-power are essential. Does not require high input voltages for programming. Operates from a single power supply, 2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. Enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK). All programming and erase cycles are self-timed.

Features

AI Translation
  • Single 2.5V or 2.7V to 3.6V Supply
  • RapidS Serial Interface: 66MHz Maximum Clock Frequency – SPI Compatible Modes 0 and 3
  • User Configurable Page Size – 256-Bytes per Page – 264-Bytes per Page – Page Size Can Be Factory Pre-configured for 256-Bytes
  • Page Program Operation – Intelligent Programming Operation – 4,096 Pages (256/264-Bytes/Page) Main Memory
  • Flexible Erase Options – Page Erase (256-Bytes) – Block Erase (2-Kbytes) – Sector Erase (64-Kbytes) – Chip Erase (8Mbits)
  • Two SRAM Data Buffers (256-/264-Bytes) – Allows Receiving of Data while Reprogramming the Flash Array
  • Continuous Read Capability through Entire Array – Ideal for Code Shadowing Applications
  • Low-power Dissipation – 7mA Active Read Current Typical – 25µA Standby Current Typical – 15µA Deep Power Down Typical
  • Hardware and Software Data Protection Features – Individual Sector
  • Sector Lockdown for Secure Code and Data Storage – Individual Sector
  • Security: 128-byte Security Register – 64-byte User Programmable Space – Unique 64-byte Device Identifier
  • JEDEC Standard Manufacturer and Device ID Read
  • 100,000 Program/Erase Cycles Per Page Minimum
  • Data Retention – 20 Years
  • Industrial Temperature Range
  • Green (Pb/Halide-free/RoHS Compliant) Packaging Options