ATO SOLUTION Co ., LTD AFND1G08U3-CKA

The AFND1G08U3 is 1G-bit with spare 32Mbit capacity. The device is offered in 3.3V power supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 16 series connected Flash Cells. A program operation can be performed in typical 200us on the 2048-bytes and an erase operation can be performed in typical 2ms on a 128K-bytes block. Data in the page can be read out at 25ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. Command, Data and Address are synchronously introduced using /CE, /WE, ALE and CLE input pin. The output pin R/B(open drain buffer) signals the status of the device during each operation. In a system with multiple memories the R/B pins can be connected all together to provide a global status signal. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the AFND1G08U3’s extended reliability of 100K program / erase cycles by providing ECC(Error Correction Code) with real time mapping-out algorithm. The chip could be offered with the /CE don’t care function. This function allows the direct download of the code form the NAND flash memory device by a microcontroller, since the /CE transitions do not stop the read operation. The copy back function allows the optimization of defective blocks management : when a page program operation fails the data can be directly programmed in another page inside the same array section without the time consuming serial data insertion phase. Also, this device includes extra features like OTP area, Block mechanism. The AFND1G08U3 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

• 3.3V Device(AFND1G08U3) 2.7V ~ 3.6V
• Memory Cell Array : (128M + 4M) x 8bits
• Data Register : (2048 + 64) x 8bits
• Page Program : (2048 + 64) x 8bits
• Block Erase : (128K + 4K) x 8bit = 64pages
• Page Size : (2048 + 64) x 8bits
• Random Access : 25us(Max.)
• Serial Page Access : 25ns(Min.)
• Program time : 200us(Typ.)
• Block Erase time : 2ms(Typ.)
• Endurance : 100K Program / Erase Cycles(With 1bit/528byte ECC)
• Data Retention : 10 years
• AFND1G08U3 : Pb-Free Package
• 48-pin TSOP 12 x 20 / 0.5 mm pitch
• 48-Ball FBGA: 9.0 x 9.0 x 1.0mm
• 48-Ball FBGA: 6.5 x 8.0 x 1.0mm
• 63-Ball FBGA : 9.0 x 11.0 x 1.0mm
• Operating Temperature - Commercial Grade: 0℃ ~ 70℃
• Industrial Grade : -40℃ ~ 85℃

• solid state file storage
• other portable applications requiring non-volatility