YANGJIE YJL3401A
| Manufacturer | YANGJIEAsian Brands |
| MPN | YJL3401A |
| LCSC Part # | C393520 |
| Packaging | SOT-23(TO-236) |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 4.4A SOT-23(TO-236) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | YANGJIE | |
| Packaging | SOT-23(TO-236) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 4.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 55mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 680pF | |
| Gate Charge(Qg) | 7.2nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
- Trench Power LV MOSFET technology
- High density cell design for Low RDS(ON)
- High Speed switching
Applications
AI Translation
- Battery protection
- Load switch
- Power management
In-Stock: 20,800
20,800 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0536 | $ 0.54 |
| 100+ | $ 0.0435 | $ 4.35 |
| 300+ | $ 0.0384 | $ 11.52 |
| 3,000+ | $ 0.0346 | $ 103.80 |
| 6,000+ | $ 0.0316 | $ 189.60 |
| 9,000+ | $ 0.03 | $ 270.00 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | YANGJIE | |
| Packaging | SOT-23(TO-236) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 105pF | |
| Current - Continuous Drain(Id) | 4.4A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Pd - Power Dissipation | 1.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 68pF | |
| RDS(on) | 55mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 680pF | |
| Gate Charge(Qg) | 7.2nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
- Trench Power LV MOSFET technology
- High density cell design for Low RDS(ON)
- High Speed switching
Applications
AI Translation
- Battery protection
- Load switch
- Power management
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



