NCE NCE30P50G
| Manufacturer | NCEAsian Brands |
| MPN | NCE30P50G |
| LCSC Part # | C326370 |
| Packaging | PDFN-8(5.8x4.9) |
| Customer # | |
| Key Attributes | MOSFET P-CH 30V 50A PDFN-8(5.8x4.9) |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | PDFN-8(5.8x4.9) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 695pF | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | 665pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.59nF | |
| Gate Charge(Qg) | 8nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NCE30P50G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = -30V, ID = -50A
- RDS(ON) < 7mΩ @ VGS = -10V
Applications
AI Translation
- Battery and load switches
In-Stock: 3,109
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5197 | $ 0.52 |
| 10+ | $ 0.3985 | $ 3.99 |
| 30+ | $ 0.3475 | $ 10.43 |
| 100+ | $ 0.2838 | $ 28.38 |
| 500+ | $ 0.2551 | $ 127.55 |
| 1,000+ | $ 0.2375 | $ 237.50 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | PDFN-8(5.8x4.9) | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 695pF | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 35W | |
| Reverse Transfer Capacitance (Crss@Vds) | 665pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.59nF | |
| Gate Charge(Qg) | 8nC@10V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NCE30P50G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = -30V, ID = -50A
- RDS(ON) < 7mΩ @ VGS = -10V
Applications
AI Translation
- Battery and load switches
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
