NCE NCE65T260K
| Manufacturer | NCEAsian Brands |
| MPN | NCE65T260K |
| LCSC Part # | C326373 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 15A TO-252 |
| Datasheet | NCE NCE65T260K |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 74pF | |
| Pd - Power Dissipation | 131W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.2pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 74pF | |
| Pd - Power Dissipation | 131W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.2pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
AI Translation
- New technology for high voltage device
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Applications
AI Translation
- Power factor correction(PFC)
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply(UPS)
Every Order Guarantee
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In-Stock: 2,174
2,174 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.5841 | $ 1.58 |
| 10+ | $ 1.251 | $ 12.51 |
| 30+ | $ 1.0853 | $ 32.56 |
| 100+ | $ 0.9212 | $ 92.12 |
| 500+ | $ 0.8221 | $ 411.05 |
| 1,000+ | $ 0.7701 | $ 770.10 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 74pF | |
| Pd - Power Dissipation | 131W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.2pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 74pF | |
| Pd - Power Dissipation | 131W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 15A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.2pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.4nF | |
| Gate Charge(Qg) | 42nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
AI Translation
- New technology for high voltage device
- Low on-resistance and low conduction losses
- Small package
- Ultra Low Gate Charge cause lower driving requirements
- 100% Avalanche Tested
- ROHS compliant
Applications
AI Translation
- Power factor correction(PFC)
- Switched mode power supplies(SMPS)
- Uninterruptible Power Supply(UPS)
C326373 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
