NCE NCE6050A
| Manufacturer | NCEAsian Brands |
| MPN | NCE6050A |
| LCSC Part # | C502821 |
| Packaging | TO-220-3L |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 50A TO-220-3L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220-3L | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 85W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 50nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NCE6050A utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 60V, ID = 50A
- RDS(ON) < 20 mΩ at VGS = 10V
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency under high EAS
- Package with superior thermal dissipation performance
- Special process technology with high ESD capability
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
In-Stock: 911
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.3449 | $ 0.34 |
| 10+ | $ 0.2653 | $ 2.65 |
| 50+ | $ 0.2311 | $ 11.56 |
| 100+ | $ 0.1885 | $ 18.85 |
| 500+ | $ 0.1695 | $ 84.75 |
| 1,000+ | $ 0.1581 | $ 158.10 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-220-3L | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 50A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 85W | |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.05nF | |
| Gate Charge(Qg) | 50nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NCE6050A utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 60V, ID = 50A
- RDS(ON) < 20 mΩ at VGS = 10V
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency under high EAS
- Package with superior thermal dissipation performance
- Special process technology with high ESD capability
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
