- Pinout
- Footprint
Images for reference only
EDA ModelsEasyEDA
ST STP90NF03L
| Manufacturer | |
| MPN | STP90NF03L |
| LCSC Part # | C60612 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET N-CH 30V 90A TO-220 |
| Datasheet | ST STP90NF03L |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 860pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 47nC@5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 860pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 90A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 47nC@5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This application specific Power Mosfet is the third generation of unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
Features
AI Translation
- Optimal RDS(on)×Qg trade-off
- Conduction losses reduced
- Switching losses reduced
Applications
AI Translation
- Switching application
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 185
185 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.2937 | $ 1.29 |
| 10+ | $ 1.0819 | $ 10.82 |
| 50+ | $ 0.967 | $ 48.35 |
| 100+ | $ 0.8356 | $ 83.56 |
| 500+ | $ 0.7782 | $ 389.10 |
| 1,000+ | $ 0.7519 | $ 751.90 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 860pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 90A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 47nC@5V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 860pF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -65℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 90A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 5.6mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.7nF | |
| Gate Charge(Qg) | 47nC@5V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This application specific Power Mosfet is the third generation of unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
Features
AI Translation
- Optimal RDS(on)×Qg trade-off
- Conduction losses reduced
- Switching losses reduced
Applications
AI Translation
- Switching application
C60612 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STP110N10F7 | ST | TO-220 | 154 | $ 1.4785 | ||
| MGP054N08N | Megain | TO-220 | 1,014 | $ 0.3019 | ||
| AUP039N10 | ANHI | TO-220 | 396 | $0.6565 $0.691 | ||
| LNC04R035B | LONTEN | TO-220 | 4 | $ 0.6563 | ||
| CSD18504KCS-VB | VBsemi Elec | TO-220AB | 54 | $0.9447 $1.1114 | ||
| PHP101NQ04T-VB | VBsemi Elec | TO-220AB | 10 | $0.7072 $0.832 | ||
| CMP60N04-VB | VBsemi Elec | TO-220AB | 10 | $0.7072 $0.832 | ||
| SKST065N08N | CRMICRO | TO-220 | 0 | $ 0.6515 | ||
| STP105N3LL | ST | TO-220 | 0 | $ 0.6012 | ||
| PSMN4R5-40PS,127 | Nexperia | TO-220AB | 0 | $ 4.2582 |