ST STF14N80K5
| Manufacturer | |
| MPN | STF14N80K5 |
| LCSC Part # | C2891284 |
| Packaging | TO-220FP |
| Customer # | |
| Key Attributes | MOSFET N-CH 800V 12A TO-220FP |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.8pF | |
| RDS(on) | 445mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 620pF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These ultra-high voltage N-channel power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. This results in significantly reduced on-resistance and ultra-low gate charge, making them ideal for applications with extremely demanding power density and efficiency requirements.
Features
AI Translation
- Industry-lowest RDS(on) × die area product
- Industry-best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
In-Stock: 1,048
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.1628 | $ 2.16 |
| 10+ | $ 1.8346 | $ 18.35 |
| 50+ | $ 1.6298 | $ 81.49 |
| 100+ | $ 1.4202 | $ 142.02 |
| 500+ | $ 1.326 | $ 663.00 |
| 1,000+ | $ 1.2854 | $ 1285.40 |
Standard Packaging50/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220FP | |
| Drain to Source Voltage | 800V | |
| Output Capacitance(Coss) | 60pF | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 30W | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.8pF | |
| RDS(on) | 445mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 620pF | |
| Gate Charge(Qg) | 22nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
These ultra-high voltage N-channel power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. This results in significantly reduced on-resistance and ultra-low gate charge, making them ideal for applications with extremely demanding power density and efficiency requirements.
Features
AI Translation
- Industry-lowest RDS(on) × die area product
- Industry-best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener protection
Applications
AI Translation
- Switching applications
C2891284 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



