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Infineon IRF530NPBFRoHS

Manufacturer
Infineon
MPN
IRF530NPBF
LCSC Part #
C2565
Packaging
TO-220AB
Customer #
Key Attributes
MOSFET N-CH 100V 17A TO-220AB
Datasheetpdf iconInfineon IRF530NPBF
In-Stock: 59,875
59,875 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3407$ 1.70
50+$ 0.2611$ 13.06
150+$ 0.2252$ 33.78
500+$ 0.1931$ 96.55
2,000+$ 0.1843$ 368.60
5,000+$ 0.179$ 895.00
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220AB
Drain to Source Voltage100V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)19pF
RDS(on)90mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)920pF
Gate Charge(Qg)37nC
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Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

Advanced HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO - 220 package is universally preferred for all commercial - industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO - 220 contribute to its wide acceptance throughout the industry.

Features

AI Translation
  • Advanced Process Technology
  • Ultra Low On - Resistance
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Lead - Free