HXY MOSFET SI2301-ZE
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | SI2301-ZE |
| LCSC Part # | C5261052 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 2.3A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 58pF | |
| Current - Continuous Drain(Id) | 2.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 650mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF | |
| RDS(on) | 130mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 285pF | |
| Gate Charge(Qg) | 2.9nC@4.5V | |
| Type | P-Channel |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 100 |
| Multiple | 100 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The SI2301-ZE utilizes advanced trench technology to provide excellent RDS(ON), low gate charge, and the ability to operate at gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- V DS = -20V, I D = -2.3A
- R DS(ON) < 140mΩ @ V GS = -4.5V
- R DS(ON) < 162mΩ @ V GS = -2.5V
Applications
AI Translation
- PWM applications
- Load switch
- SOT-23
- P-channel MOSFET
In-Stock: 353,500
353,500 In stock, ships now
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 100+ | $ 0.0138 | $ 1.38 |
| 1,000+ | $ 0.0112 | $ 11.20 |
| 3,000+ | $ 0.0083 | $ 24.90 |
| 9,000+ | $ 0.0074 | $ 66.60 |
| 51,000+ | $ 0.0067 | $ 341.70 |
| 99,000+ | $ 0.0063 | $ 623.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Configuration | Standalone | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 58pF | |
| Current - Continuous Drain(Id) | 2.3A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Pd - Power Dissipation | 650mW | |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF | |
| RDS(on) | 130mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 285pF | |
| Gate Charge(Qg) | 2.9nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 100 |
| Multiple | 100 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The SI2301-ZE utilizes advanced trench technology to provide excellent RDS(ON), low gate charge, and the ability to operate at gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- V DS = -20V, I D = -2.3A
- R DS(ON) < 140mΩ @ V GS = -4.5V
- R DS(ON) < 162mΩ @ V GS = -2.5V
Applications
AI Translation
- PWM applications
- Load switch
- SOT-23
- P-channel MOSFET
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



