HXY MOSFET AO3422-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | AO3422-HXY |
| LCSC Part # | C4748727 |
| Packaging | SOT-23-3L |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 4.5A SOT-23-3L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23-3L | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 148pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 73mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 695pF | |
| Gate Charge(Qg) | 5.5nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO3422 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 2.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 60V, ID = 4.5A
- RDS(ON) < 85mΩ at VGS = 10V
- RDS(ON) < 93mΩ at VGS = 4.5V
Applications
AI Translation
- PWM applications
- Load switching
- Power management
In-Stock: 1,440
1,440 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0674$ 0.0526 | $ 0.53 |
| 100+ | $ 0.0564$ 0.0440 | $ 4.40 |
| 300+ | $ 0.0508$ 0.0397 | $ 11.91 |
| 3,000+ | $ 0.0396$ 0.0309 | $ 92.70 |
| 6,000+ | $ 0.0363$ 0.0284 | $ 170.40 |
| 9,000+ | $ 0.0347$ 0.0271 | $ 243.90 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23-3L | |
| Configuration | Standalone | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 148pF | |
| Current - Continuous Drain(Id) | 4.5A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 8W | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| RDS(on) | 73mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 695pF | |
| Gate Charge(Qg) | 5.5nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The AO3422 utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 2.5V. This device is suitable for battery protection or other switching applications.
Features
AI Translation
- VDS = 60V, ID = 4.5A
- RDS(ON) < 85mΩ at VGS = 10V
- RDS(ON) < 93mΩ at VGS = 4.5V
Applications
AI Translation
- PWM applications
- Load switching
- Power management
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



