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HUAYI HYG110P04LQ2C2 product image
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HUAYI HYG110P04LQ2C2RoHS

Manufacturer
HUAYIAsian Brands
MPN
HYG110P04LQ2C2
LCSC Part #
C2891580
Packaging
PDFN-8(5.9x5.2)
Customer #
Key Attributes
MOSFET P-CH 40V 55A PDFN-8(5.9x5.2)
Datasheetpdf iconHUAYI HYG110P04LQ2C2

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUAYI
PackagingPDFN-8(5.9x5.2)
Drain to Source Voltage40V
Output Capacitance(Coss)253pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation62.5W
RDS(on)13mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)140pF
Number1 P-Channel
Input Capacitance(Ciss)4.468nF
Gate Charge(Qg)76nC@10V
TypeP-Channel

Additional Information

TypeDetails
Minimum5
Multiple5
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

-40V/-55A On-resistance RDS(ON) = 9.0 mΩ (typical), gate-source voltage VGS = -10V On-resistance RDS(ON) = 13.0 mΩ (typical), gate-source voltage VGS = -4.5V 100% avalanche tested

  • Robust and reliable
  • Halogen-free devices available

Features

AI Translation
  • -40V/-55A
  • On-resistance RDS(ON) = 9.0 mΩ (typical), gate-source voltage VGS = -10V
  • On-resistance RDS(ON) = 13.0 mΩ (typical), gate-source voltage VGS = -4.5V
  • 100% avalanche tested
  • Reliable and durable
  • Halogen-free devices available

Applications

AI Translation
  • Switching applications
  • DC/DC power management
  • Battery protection
In-Stock: 4,690
4,690 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
5+$ 0.3261$ 1.63
50+$ 0.2614$ 13.07
150+$ 0.2336$ 35.04
500+$ 0.199$ 99.50
2,500+$ 0.1718$ 429.50
5,000+$ 0.1626$ 813.00
Standard Packaging5000/Full Reel
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