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HUAYI HYG028N10NS1B6 product image
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HUAYI HYG028N10NS1B6RoHS

Manufacturer
HUAYIAsian Brands
MPN
HYG028N10NS1B6
LCSC Part #
C2886383
Packaging
TO-263-6
Customer #
Key Attributes
MOSFET N-CH 100V 230A TO-263-6
Datasheetpdf iconHUAYI HYG028N10NS1B6

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerHUAYI
PackagingTO-263-6
Drain to Source Voltage100V
Output Capacitance(Coss)3.454nF
Current - Continuous Drain(Id)230A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)242pF
RDS(on)3.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.32nF
Gate Charge(Qg)176nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging800
Sales UnitPiece

Introduction

AI Translation

GL40N30A8 is a silicon N-channel enhancement-mode VDMOSFET fabricated using self-aligned planar technology to reduce on-state losses, improve switching performance, and enhance avalanche energy. This transistor is suitable for various power switching circuits to achieve system miniaturization and higher efficiency. Available in TO-220AB package, RoHS compliant.

Features

AI Translation
  • 100V/230A
  • R DS(ON) = 2.4mΩ (typ.) at V GS = 10V
  • 100% avalanche tested
  • Robust and reliable
  • Halogen-free, RoHS-compliant devices available

Applications

AI Translation
  • Power switching applications
  • Uninterruptible power supplies
  • Motor control
In-Stock: 1,912
1,912 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.0811$ 1.08
10+$ 0.8825$ 8.83
30+$ 0.7734$ 23.20
100+$ 0.6497$ 64.97
500+$ 0.6171$ 308.55
800+$ 0.5911$ 472.88
Standard Packaging800/Full Reel
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