HUASHUO HSU60P02
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSU60P02 |
| LCSC Part # | C845610 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 60A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 509pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 431pF | |
| RDS(on) | 8.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.6nF | |
| Gate Charge(Qg) | 44nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
HSU60P02 is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSU60P02 complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- Available in green/eco-friendly package
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
In-Stock: 915
915 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2423 | $ 1.21 |
| 50+ | $ 0.1931 | $ 9.66 |
| 150+ | $ 0.172 | $ 25.80 |
| 500+ | $ 0.1456 | $ 72.80 |
| 2,500+ | $ 0.1281 | $ 320.25 |
| 5,000+ | $ 0.121 | $ 605.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 509pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 650mV | |
| Pd - Power Dissipation | 70W | |
| Reverse Transfer Capacitance (Crss@Vds) | 431pF | |
| RDS(on) | 8.5mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 4.6nF | |
| Gate Charge(Qg) | 44nC@4.5V | |
| Type | P-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
HSU60P02 is a high cell density trench P-channel MOSFET, offering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. HSU60P02 complies with RoHS and green product requirements, and has passed full-function reliability qualification.
Features
AI Translation
- Ultra-low gate charge
- Available in green/eco-friendly package
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



