NCE NCE6075K
| Manufacturer | NCEAsian Brands |
| MPN | NCE6075K |
| LCSC Part # | C110912 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 75A TO-252-2L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252-2L | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 75A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 11.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NCE6075K utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 60V, ID = 75A
- RDS(ON) < 11.5mΩ (typical: 9.1mΩ) at VGS = 10V
- High-density cell design for ultra-low Rdson
- Fully characterized avalanche voltage and current
- High EAS with excellent stability and consistency
- Superior package with excellent thermal dissipation
- Special process technology for high ESD capability
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Not available now
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252-2L | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 75A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 110W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 11.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 50nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
NCE6075K utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = 60V, ID = 75A
- RDS(ON) < 11.5mΩ (typical: 9.1mΩ) at VGS = 10V
- High-density cell design for ultra-low Rdson
- Fully characterized avalanche voltage and current
- High EAS with excellent stability and consistency
- Superior package with excellent thermal dissipation
- Special process technology for high ESD capability
Applications
AI Translation
- Power switch applications
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
