NCE NCE2060K
| Manufacturer | NCEAsian Brands |
| MPN | NCE2060K |
| LCSC Part # | C187866 |
| Packaging | TO-252-2L |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 60A TO-252-2L |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252-2L | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 500pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 6mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 27nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NCE2060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = 20V, ID = 60A
- RDS(ON) < 6mΩ @ VGS = 4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Applications
AI Translation
- Load switching
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
In-Stock: 1,850
1,850 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1823 | $ 0.91 |
| 50+ | $ 0.141 | $ 7.05 |
| 150+ | $ 0.1203 | $ 18.05 |
| 500+ | $ 0.1048 | $ 52.40 |
| 2,500+ | $ 0.0924 | $ 231.00 |
| 5,000+ | $ 0.0862 | $ 431.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | NCE | |
| Packaging | TO-252-2L | |
| Drain to Source Voltage | 20V | |
| Output Capacitance(Coss) | 500pF | |
| Current - Continuous Drain(Id) | 60A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 6mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2nF | |
| Gate Charge(Qg) | 27nC@4.5V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The NCE2060K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Features
AI Translation
- VDS = 20V, ID = 60A
- RDS(ON) < 6mΩ @ VGS = 4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Applications
AI Translation
- Load switching
- Hard switching and high-frequency circuits
- Uninterruptible power supplies
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
