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WILLSEMI WNM2021-3/TR product image
  • WNM2021-3/TR thumbnail 1
  • WNM2021-3/TR thumbnail 2
  • WNM2021-3/TR thumbnail 3
  • Pinout Diagram
  • Footprint Diagram
Images for reference only

WILLSEMI WNM2021-3/TRRoHS

Manufacturer
WILLSEMIAsian Brands
MPN
WNM2021-3/TR
LCSC Part #
C239556
Packaging
SOT-323
Customer #
Key Attributes
MOSFET N-CH 20V 0.89A SOT-323
Datasheetpdf iconWILLSEMI WNM2021-3/TR

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerWILLSEMI
PackagingSOT-323
Drain to Source Voltage20V
Current - Continuous Drain(Id)890mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))850mV
Pd - Power Dissipation370mW
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)320mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)1.15nC@4.5V
TypeN-Channel
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Additional Information

TypeDetails
Minimum10
Multiple10
Standard Packaging3000
Sales UnitPiece

Introduction

AI Translation

The WNM2021 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2021 is Pb-free and Halogen-free.

Features

AI Translation
  • Trench Technology
  • Supper high density cell design
  • Excellent ON resistance
  • Extremely Low Threshold Voltage
  • Small package SOT-323

Applications

AI Translation
  • DC-DC converter circuit
  • Small Signal Switch
  • Load Switch
  • Level Shift
In-Stock: 16,660
16,660 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
10+$ 0.0855$ 0.86
100+$ 0.0702$ 7.02
300+$ 0.0592$ 17.76
1,000+$ 0.05$ 50.00
5,000+$ 0.0485$ 242.50
10,000+$ 0.0477$ 477.00
Standard Packaging3000/Full Reel
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