VBsemi Elec HAT2016R-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | HAT2016R-VB |
| LCSC Part # | C725055 |
| Packaging | SO-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 30V 6.8A SO-8 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 117pF | |
| Current - Continuous Drain(Id) | 6.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.78W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 586pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Compliant with halogen-free requirements per IEC 61249-2-21
- Trench power MOSFET
- 100% tested for single-pulse avalanche energy (UIS)
- 100% tested for gate resistance (Rg)
- Compliant with RoHS Directive 2002/95/EC
Applications
AI Translation
- Set-top box
- Low-current DC/DC converter
In-Stock: 100
100 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1772$ 0.1684 | $ 0.84 |
| 50+ | $ 0.1731$ 0.1645 | $ 8.23 |
| 150+ | $ 0.1703$ 0.1618 | $ 24.27 |
| 500+ | $ 0.1676$ 0.1593 | $ 79.65 |
Standard Packaging4000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | SO-8 | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 117pF | |
| Current - Continuous Drain(Id) | 6.8A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.78W | |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF | |
| RDS(on) | 22mΩ@10V | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 586pF | |
| Gate Charge(Qg) | 15nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Compliant with halogen-free requirements per IEC 61249-2-21
- Trench power MOSFET
- 100% tested for single-pulse avalanche energy (UIS)
- 100% tested for gate resistance (Rg)
- Compliant with RoHS Directive 2002/95/EC
Applications
AI Translation
- Set-top box
- Low-current DC/DC converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



