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onsemi FQD11P06TMRoHS

Manufacturer
onsemi
MPN
FQD11P06TM
LCSC Part #
C719783
Packaging
DPAK
Customer #
Key Attributes
MOSFET P-CH 60V 9.4A DPAK
Datasheetpdf icononsemi FQD11P06TM
In-Stock: 13,378
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10+$ 0.4793$ 4.79
30+$ 0.4241$ 12.72
100+$ 0.3705$ 37.05
500+$ 0.338$ 169.00
1,000+$ 0.3217$ 321.70
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingDPAK
Drain to Source Voltage60V
Current - Continuous Drain(Id)9.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)185mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)550pF
Gate Charge(Qg)17nC@48V
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Introduction

AI Translation

This P-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features

AI Translation
  • -9.4 A, -60 V, RDS(on)=185 mΩ (Max.) @ VGS = -10 V, ID=-4.7 A
  • Low Gate Charge (Typ. 13 nC)
  • Low Crss (Typ. 45 pF)
  • 100% Avalanche Tested

Applications

AI Translation
  • switched mode power supplies
  • audio amplifier
  • DC motor control
  • variable switching power applications