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onsemi NDS351N
| Manufacturer | |
| MPN | NDS351N |
| LCSC Part # | C124465 |
| Packaging | TO-236-3(SOT-23-3) |
| Customer # | |
| Key Attributes | 30V 1.1A 2V 500mW 250mΩ@4.5V 1 N-channel N-Channel TO-236-3(SOT-23-3) Single FETs, MOSFETs RoHS |
| Datasheet |  onsemi NDS351N |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-236-3(SOT-23-3) | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 1.1A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 250mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N-channel logic-level enhancement-mode power MOSFETs are fabricated using a proprietary high cell density DMOS process. This ultra-high density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications such as notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits, where compact surface-mount packages demand fast switching and low in-line power dissipation.
Features
- 1.1A, 30V. R DS(ON) = 0.25Ω at VGS = 4.5V.
- Proprietary package design with copper lead frame for superior thermal and electrical performance.
- High-density cell design for ultra-low RDS(ON).
- Excellent on-resistance and maximum DC current capability.
- Compact industry-standard SOT-23 SMT package.
Applications
- Laptop computers
- Portable phones
- PCMCIA cards
- Other battery-powered circuits
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-236-3(SOT-23-3) | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | - | |
| Current - Continuous Drain(Id) | 1.1A | |
| Operating Temperature - | - | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 500mW | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 250mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | - | |
| Type | N-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
These N-channel logic-level enhancement-mode power MOSFETs are fabricated using a proprietary high cell density DMOS process. This ultra-high density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications such as notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits, where compact surface-mount packages demand fast switching and low in-line power dissipation.
Features
- 1.1A, 30V. R DS(ON) = 0.25Ω at VGS = 4.5V.
- Proprietary package design with copper lead frame for superior thermal and electrical performance.
- High-density cell design for ultra-low RDS(ON).
- Excellent on-resistance and maximum DC current capability.
- Compact industry-standard SOT-23 SMT package.
Applications
- Laptop computers
- Portable phones
- PCMCIA cards
- Other battery-powered circuits
C124465 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |