MCC SI2333-TP
| Manufacturer | |
| MPN | SI2333-TP |
| LCSC Part # | C669001 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET P-CH 12V 6A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MCC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 255pF | |
| Current - Continuous Drain(Id) | 6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 236pF | |
| RDS(on) | 28mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.275nF | |
| Gate Charge(Qg) | 14nC | |
| Vgs | ±8V | |
| Type | P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This enhancement-mode (normally-off) transistor utilizes a vertical double-diffused metal oxide semiconductor (DMOS) structure and Supertex's proven silicon-gate fabrication process. This combination gives the device the power handling capability of bipolar transistors, along with the high input impedance and positive temperature coefficient inherent to MOS devices. As is characteristic of all MOS structures, the device is immune to thermal runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideal for a wide range of switching and amplification applications requiring ultra-low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Features
- TrenchFET Power Mosfet
- Excellent RDS(ON)
- Epoxy Meets UL 94 V-0 Flammability Rating
- Moisture Sensitivity Level 1
- Halogen Free Available Upon Request By Adding Suffix "-HF"
- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)
Applications
- Motor control
- Converters
- Amplifiers
- Switches
- Power supply circuits
- Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0602 | $ 0.60 |
| 100+ | $ 0.0495 | $ 4.95 |
| 300+ | $ 0.0436 | $ 13.08 |
| 3,000+ | $ 0.04 | $ 120.00 |
| 6,000+ | $ 0.0369 | $ 221.40 |
| 9,000+ | $ 0.0352 | $ 316.80 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MCC | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 12V | |
| Output Capacitance(Coss) | 255pF | |
| Current - Continuous Drain(Id) | 6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 236pF | |
| RDS(on) | 28mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.275nF | |
| Gate Charge(Qg) | 14nC | |
| Vgs | ±8V | |
| Type | P-Channel |
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This enhancement-mode (normally-off) transistor utilizes a vertical double-diffused metal oxide semiconductor (DMOS) structure and Supertex's proven silicon-gate fabrication process. This combination gives the device the power handling capability of bipolar transistors, along with the high input impedance and positive temperature coefficient inherent to MOS devices. As is characteristic of all MOS structures, the device is immune to thermal runaway and thermally-induced secondary breakdown.
Supertex's vertical DMOS FETs are ideal for a wide range of switching and amplification applications requiring ultra-low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Features
- TrenchFET Power Mosfet
- Excellent RDS(ON)
- Epoxy Meets UL 94 V-0 Flammability Rating
- Moisture Sensitivity Level 1
- Halogen Free Available Upon Request By Adding Suffix "-HF"
- Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)
Applications
- Motor control
- Converters
- Amplifiers
- Switches
- Power supply circuits
- Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



