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Infineon IPP200N25N3 G product image
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Infineon IPP200N25N3 GRoHS

Manufacturer
MPN
IPP200N25N3 G
LCSC Part #
C537171
Packaging
TO-220-3
Customer #
Key Attributes
OptiMOs 3 Power-Transistor
Datasheetpdf iconInfineon IPP200N25N3 G

Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-220-3
Drain to Source Voltage250V
Output Capacitance(Coss)297pF
Current - Continuous Drain(Id)64A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation300W
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)17.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.34nF
Gate Charge(Qg)64nC@10V
TypeN-Channel

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Features

AI Translation
  • N-channel, normal level
  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC for target application
  • Halogen-free according to IEC61249-2-21
  • Ideal for high-frequency switching and synchronous rectification
In-Stock: 666
666 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 3.0025$ 3.00
10+$ 2.552$ 25.52
50+$ 2.283$ 114.15
100+$ 2.0125$ 201.25
500+$ 1.8877$ 943.85
1,000+$ 1.831$ 1831.00
Standard Packaging50/Full Tube
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