Infineon IPP114N12N3 G
| Manufacturer | |
| MPN | IPP114N12N3 G |
| LCSC Part # | C537157 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | MOSFET N-CH 120V TO-220-3 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 120V | |
| Output Capacitance(Coss) | 408pF | |
| Current - Continuous Drain(Id) | 75A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 11.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.24nF | |
| Gate Charge(Qg) | 49nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normal level
- Excellent gate charge × RDS(on) product (FOM)
- Very low on-resistance RDS(on)
- 175 ℃ operating temperature
- Pb-free lead plating; RoHS compliant; halogen free
- Qualified according to JEDEC for target application
- Ideal for high-frequency switching and synchronous rectification
In-Stock: 5
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 5.6337 | $ 5.63 |
| 10+ | $ 4.8589 | $ 48.59 |
| 30+ | $ 4.3992 | $ 131.98 |
| 100+ | $ 3.9334 | $ 393.34 |
| 500+ | $ 3.7191 | $ 1859.55 |
| 1,000+ | $ 3.6228 | $ 3622.80 |
Standard Packaging500/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-220-3 | |
| Drain to Source Voltage | 120V | |
| Output Capacitance(Coss) | 408pF | |
| Current - Continuous Drain(Id) | 75A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF | |
| RDS(on) | 11.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.24nF | |
| Gate Charge(Qg) | 49nC@10V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- N-channel, normal level
- Excellent gate charge × RDS(on) product (FOM)
- Very low on-resistance RDS(on)
- 175 ℃ operating temperature
- Pb-free lead plating; RoHS compliant; halogen free
- Qualified according to JEDEC for target application
- Ideal for high-frequency switching and synchronous rectification
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



