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Infineon IPD110N12N3 G product image
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Infineon IPD110N12N3 GRoHS

Manufacturer
Infineon
MPN
IPD110N12N3 G
LCSC Part #
C536732
Packaging
TO-252-3
Customer #
Key Attributes
MOSFET N-CH 120V 75A TO-252-3
Datasheetpdf iconInfineon IPD110N12N3 G
In-Stock: 1,025
1,025 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 1.4087$ 1.41
10+$ 1.168$ 11.68
30+$ 1.0346$ 31.04
100+$ 0.8443$ 84.43
500+$ 0.7776$ 388.80
1,000+$ 0.7483$ 748.30
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-252-3
Drain to Source Voltage120V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)11mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.31nF
Gate Charge(Qg)65nC@10V
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Features

AI Translation
  • N-channel, normal level
  • Excellent gate charge Ω×RDS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating; RoHS compliant
  • Qualified according to JEDEC1) for target application
  • Halogen free according to IEC61249-2-21
  • Ideal for high-frequency switching and synchronous rectification