Infineon IPB011N04N G
| Manufacturer | |
| MPN | IPB011N04N G |
| LCSC Part # | C536472 |
| Packaging | TO-263-7 |
| Customer # | |
| Key Attributes | 250W 40V 180A 2V 0.9mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-7 | |
| Output Capacitance(Coss) | 4nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 180A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 0.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 16nF | |
| Gate Charge(Qg) | 188nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- MOSFET for OR-ing and UPS applications
- JEDEC-compliant for target applications
- N-channel
- Normal level
- Ultra-low on-resistance RDS(on)
- Avalanche rated
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
In-Stock: 10
10 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 4.9128 | $ 4.91 |
| 10+ | $ 4.2164 | $ 42.16 |
| 30+ | $ 3.8013 | $ 114.04 |
| 100+ | $ 3.3832 | $ 338.32 |
| 500+ | $ 3.1898 | $ 1594.90 |
| 1,000+ | $ 3.1033 | $ 3103.30 |
Standard Packaging1000/Full Reel | ||
Better price for more quantity?
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-263-7 | |
| Output Capacitance(Coss) | 4nF | |
| Pd - Power Dissipation | 250W | |
| Configuration | Standalone | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 180A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF | |
| RDS(on) | 0.9mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 16nF | |
| Gate Charge(Qg) | 188nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- MOSFET for OR-ing and UPS applications
- JEDEC-compliant for target applications
- N-channel
- Normal level
- Ultra-low on-resistance RDS(on)
- Avalanche rated
- Lead-free plating; RoHS compliant
- Halogen-free per IEC61249-2-21
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

