Infineon BSC900N20NS3 G
| Manufacturer | |
| MPN | BSC900N20NS3 G |
| LCSC Part # | C534439 |
| Packaging | TDSON-8-EP(5x6) |
| Customer # | |
| Key Attributes | 200V 15.2A 4V 62.5W 90mΩ@10V 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8-EP(5x6) | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 15.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 11.6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Optimized for DC-DC conversion
- N-channel, normally-on
- Excellent gate charge × RDS(on) product (Figure of Merit FOM)
- Low on-resistance RDS(on)
- Operating temperature up to 150 °C
- Lead-free lead finish; RoHS compliant
- JEDEC qualified for target applications
- Halogen-free per IEC61249-2-21
In-Stock: 10
10 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1052 | $ 1.11 |
| 10+ | $ 1.0795 | $ 10.80 |
| 30+ | $ 1.0634 | $ 31.90 |
| 100+ | $ 1.0457 | $ 104.57 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TDSON-8-EP(5x6) | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 15.2A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF | |
| RDS(on) | 90mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 11.6nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Features
AI Translation
- Optimized for DC-DC conversion
- N-channel, normally-on
- Excellent gate charge × RDS(on) product (Figure of Merit FOM)
- Low on-resistance RDS(on)
- Operating temperature up to 150 °C
- Lead-free lead finish; RoHS compliant
- JEDEC qualified for target applications
- Halogen-free per IEC61249-2-21
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



