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Infineon BSC080N03MS G product image
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Infineon BSC080N03MS GRoHS

Manufacturer
Infineon
MPN
BSC080N03MS G
LCSC Part #
C534376
Packaging
TDSON-8-EP(5x6)
Customer #
Key Attributes
30V 53A 2V 35W 10.2mΩ@4.5V 1 N-channel TDSON-8-EP(5x6) Single FETs, MOSFETs RoHS
Datasheetpdf iconInfineon BSC080N03MS G
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTDSON-8-EP(5x6)
Drain to Source Voltage30V
Current - Continuous Drain(Id)53A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)10.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.1nF
Gate Charge(Qg)-
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging5000
Sales UnitPiece

Introduction

AI Translation

LPM3406 is an N-channel logic-level enhancement-mode power MOSFET fabricated using high cell density DMOS trench technology. This high-density process is specifically designed to minimize on-resistance. These devices are particularly suited for low-voltage applications, notebook computer power management, and other battery-powered circuits requiring high-side switching.

Features

AI Translation
  • Optimized for 5V driver applications (notebooks, VGA, point-of-load power supplies)
  • Low switching figure of merit (FOMsw) for high-frequency switching power supplies
  • 100% avalanche tested
  • N-channel
  • Ultra-low on-resistance RDS(on) at VGS = 4.5V
  • Excellent gate charge × on-resistance product (FOM)
  • JEDEC-compliant for target applications
  • Superior thermal resistance performance
  • Lead-free plating; RoHS compliant
  • Halogen-free per IEC61249-2-21

Applications

AI Translation
  • Portable media players / MP3 players
  • Mobile phones and smartphones
  • LCD displays
  • Digital camera sensors
  • Wireless network adapters