Infineon AUIRFR48ZTRL
| Manufacturer | |
| MPN | AUIRFR48ZTRL |
| LCSC Part # | C533349 |
| Packaging | DPAK |
| Customer # | |
| Key Attributes | 55V 42A 4V 91W 11mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 42A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 91W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.72nF | |
| Gate Charge(Qg) | 60nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This HEXFET power MOSFET is designed for automotive applications and utilizes the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive and a wide variety of other applications.
Features
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated at maximum junction temperature
- Lead-free, RoHS compliant
- Qualified for automotive applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.0681 | $ 1.07 |
| 200+ | $ 0.4137 | $ 82.74 |
| 500+ | $ 0.3998 | $ 199.90 |
| 1,000+ | $ 0.3921 | $ 392.10 |
Standard Packaging3000/Full Reel | ||
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK | |
| Drain to Source Voltage | 55V | |
| Current - Continuous Drain(Id) | 42A | |
| Operating Temperature - | -55℃~+175℃ | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 91W | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.72nF | |
| Gate Charge(Qg) | 60nC@10V |
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
This HEXFET power MOSFET is designed for automotive applications and utilizes the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of this design include a 175°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. Combined, these characteristics make this design a highly efficient and reliable device suitable for automotive and a wide variety of other applications.
Features
- Advanced process technology
- Ultra-low on-resistance
- 175°C operating temperature
- Fast switching
- Repetitive avalanche rated at maximum junction temperature
- Lead-free, RoHS compliant
- Qualified for automotive applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

