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Infineon IRFP250MPBFRoHS

Manufacturer
Infineon
MPN
IRFP250MPBF
LCSC Part #
C2676
Packaging
TO-247AC-3
Customer #
Key Attributes
MOSFET N-CH 200V 30A TO-247AC-3
Datasheetpdf iconInfineon IRFP250MPBF
In-Stock: 16,448
16,448 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 0.7768$ 0.78
10+$ 0.6614$ 6.61
25+$ 0.5233$ 13.08
100+$ 0.4567$ 45.67
400+$ 0.4355$ 174.20
800+$ 0.4225$ 338.00
Standard Packaging25/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerInfineon
PackagingTO-247AC-3
Drain to Source Voltage200V
Output Capacitance(Coss)315pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation214W
Reverse Transfer Capacitance (Crss@Vds)83pF
RDS(on)75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.159nF
Gate Charge(Qg)123nC
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging25
Sales UnitPiece

Introduction

AI Translation

Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Features

AI Translation
  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Ease of Paralleling
  • Simple Drive Requirements
  • Lead-Free