HUASHUO IRLML2502
| Manufacturer | HUASHUOAsian Brands |
| MPN | IRLML2502 |
| LCSC Part # | C518800 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 3.6A SOT-23 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 70mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 4.6nC@4.5V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRLML2502 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The IRLML2502 meets the RoHS and Green Product requirement with full function reliability approved. Green Device Available
Features
AI Translation
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Advanced high cell density Trench technology
In-Stock: 2,720
2,720 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.056 | $ 0.56 |
| 100+ | $ 0.0452 | $ 4.52 |
| 300+ | $ 0.0397 | $ 11.91 |
| 3,000+ | $ 0.03 | $ 90.00 |
| 6,000+ | $ 0.0267 | $ 160.20 |
| 9,000+ | $ 0.0251 | $ 225.90 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23 | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.6A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF | |
| RDS(on) | 70mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 4.6nC@4.5V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
The IRLML2502 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The IRLML2502 meets the RoHS and Green Product requirement with full function reliability approved. Green Device Available
Features
AI Translation
- Super Low Gate Charge
- Excellent Cdv/dt effect decline
- Advanced high cell density Trench technology
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



