NCE NCE60TD65BT
| Manufacturer | NCEAsian Brands |
| MPN | NCE60TD65BT |
| LCSC Part # | C5883265 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | 650V,60A,Trench FSII Fast IGBT |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | NCE | |
| Packaging | TO-247 | |
| Pd - Power Dissipation | 319W | |
| Td(off) | 170ns | |
| Td(on) | 19ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 138pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA | |
| Vce Saturation(VCE(sat)) | 1.9V@60A,15V | |
| Reverse Recovery Time(trr) | 186ns | |
| Switching Energy(Eoff) | 900uJ | |
| Turn-On Energy (Eon) | 1.1mJ | |
| Input Capacitance(Cies) | 7.018nF | |
| Output Capacitance(Coes) | 199pF | |
| Gate Charge(Qg) | 262nC@15V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation
Features
AI Translation
- Trench FSII Technology offering
- Very low VCE(sat)
- High speed switching
- Positive temperature coefficient in VCE(sat)
- Very tight parameter distribution
- High ruggedness, temperature stable behavior
Applications
AI Translation
- Air Condition
- Inverters
- Motor drives
In-Stock: 423
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.5082 | $ 2.51 |
| 10+ | $ 2.0904 | $ 20.90 |
| 30+ | $ 1.8287 | $ 54.86 |
| 90+ | $ 1.5605 | $ 140.45 |
| 510+ | $ 1.4402 | $ 734.50 |
| 1,200+ | $ 1.3866 | $ 1663.92 |
Standard Packaging30/Full Tube | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | NCE | |
| Packaging | TO-247 | |
| Pd - Power Dissipation | 319W | |
| Td(off) | 170ns | |
| Td(on) | 19ns | |
| Current - Collector(Ic) | 120A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 138pF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA | |
| Vce Saturation(VCE(sat)) | 1.9V@60A,15V | |
| Reverse Recovery Time(trr) | 186ns | |
| Switching Energy(Eoff) | 900uJ | |
| Turn-On Energy (Eon) | 1.1mJ | |
| Input Capacitance(Cies) | 7.018nF | |
| Output Capacitance(Coes) | 199pF | |
| Gate Charge(Qg) | 262nC@15V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation
Features
AI Translation
- Trench FSII Technology offering
- Very low VCE(sat)
- High speed switching
- Positive temperature coefficient in VCE(sat)
- Very tight parameter distribution
- High ruggedness, temperature stable behavior
Applications
AI Translation
- Air Condition
- Inverters
- Motor drives
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
