Infineon IKW30N60T

Manufacturer	Infineon
MPN	IKW30N60T
LCSC Part #	C10457
Packaging	TO-247
Customer #
Key Attributes	TrenchStop Series IGBT with anti-parallel EmCon HE diode
Datasheet	Infineon IKW30N60T

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufacturer	Infineon
Packaging	TO-247
Td(off)	254ns
Pd - Power Dissipation	187W
Td(on)	23ns
Operating Temperature	-40℃~+175℃
Current - Collector(Ic)	60A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	50pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.1V@0.43mA
Vce Saturation(VCE(sat))	2.05V@30A,15V
Reverse Recovery Time(trr)	143ns
Switching Energy(Eoff)	770uJ
Turn-On Energy (Eon)	690uJ
Output Capacitance(Coes)	108pF
Gate Charge(Qg)	167nC@15V

AI Translation

Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 ℃
Short circuit withstand time – 5µs
Trench and Fieldstop technology for 600 V applications offers very tight parameter distribution
Trench and Fieldstop technology for 600 V applications offers high ruggedness, temperature stable behavior
Trench and Fieldstop technology for 600 V applications offers very high switching speed
Trench and Fieldstop technology for 600 V applications offers low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode

AI Translation

In-Stock: 864

864 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 2.3729	$ 2.37
10+	$ 2.0714	$ 20.71
30+	$ 1.6168	$ 48.50
90+	$ 1.4234	$ 128.11
480+	$ 1.3364	$ 641.47
960+	$ 1.2993	$ 1247.33
Standard Packaging30/Full Tube

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