Infineon IKW20N60T

Manufacturer	Infineon
MPN	IKW20N60T
LCSC Part #	C10456
Packaging	TO-247
Customer #
Key Attributes	TrenchStop Series 600V IGBT with EmCon HE Diode
Datasheet	Infineon IKW20N60T

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufacturer	Infineon
Packaging	TO-247
Td(off)	199ns
Pd - Power Dissipation	166W
Td(on)	18ns
Operating Temperature	-40℃~+175℃
Current - Collector(Ic)	20A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	32pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.1V@290uA
Vce Saturation(VCE(sat))	2.05V@20A,15V
Reverse Recovery Time(trr)	41ns
Switching Energy(Eoff)	460uJ
Turn-On Energy (Eon)	310uJ
Input Capacitance(Cies)	1.1nF
Output Capacitance(Coes)	71pF
Gate Charge(Qg)	120nC@480V

AI Translation

Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 ℃
Short circuit withstand time – 5µs
Trench and Fieldstop technology for 600 V applications offers very tight parameter distribution
Trench and Fieldstop technology for 600 V applications offers high ruggedness, temperature stable behavior
Trench and Fieldstop technology for 600 V applications offers very high switching speed
Trench and Fieldstop technology for 600 V applications offers low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode

AI Translation

In-Stock: 2,441

2,441 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 1.3204	$ 1.32
10+	$ 1.212	$ 12.12
30+	$ 0.9026	$ 27.08
90+	$ 0.8356	$ 75.20
510+	$ 0.8069	$ 411.52
990+	$ 0.7926	$ 784.67
Standard Packaging30/Full Tube

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