Tokmas CID18N65D

Manufacturer	TokmasAsian Brands
MPN	CID18N65D
LCSC Part #	C22446733
Packaging	DFN-8(8x8)
Customer #
Key Attributes	GaN Enhancement-mode Power Transistor
Datasheet	Tokmas CID18N65D

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	Tokmas
Packaging	DFN-8(8x8)
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	17A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
Pd - Power Dissipation	113W
Technology	-
RDS(on)	100mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	0.5pF
Input Capacitance(Ciss)	125pF
Gate Charge(Qg)	3.3nC
Type	N-Channel

In-Stock: 428

428 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 1.2849	$ 1.28
10+	$ 1.0504	$ 10.50
30+	$ 0.9218	$ 27.65
100+	$ 0.7931	$ 79.31
500+	$ 0.728	$ 364.00
1,000+	$ 0.6987	$ 698.70
Standard Packaging2500/Full Reel

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Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	Tokmas
Packaging	DFN-8(8x8)
Drain to Source Voltage	650V
Current - Continuous Drain(Id)	17A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.7V
Pd - Power Dissipation	113W
Technology	-
RDS(on)	100mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)	0.5pF
Input Capacitance(Ciss)	125pF
Gate Charge(Qg)	3.3nC
Type	N-Channel