Tokmas CID10N65D

Manufacturer	TokmasAsian Brands
MPN	CID10N65D
LCSC Part #	C22446730
Packaging	DFN-8(8x8)
Customer #
Key Attributes	650V GaN-on-Silicon Enhancement-mode Power Transistor
Datasheet	Tokmas CID10N65D

Products Specifications

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	Tokmas
Packaging	DFN-8(8x8)
Drain to Source Voltage	650V
Output Capacitance(Coss)	27pF
Current - Continuous Drain(Id)	10A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Pd - Power Dissipation	75W
Technology	E-mode
RDS(on)	160mΩ
Reverse Transfer Capacitance (Crss@Vds)	0.4pF
Number	1 N-channel
Input Capacitance(Ciss)	83pF
Gate Charge(Qg)	2.3nC
Type	N-Channel

In-Stock: 523

523 In stock, ships now

Add to BOM List

Qty	Unit Price	Total Amount
1+	$ 0.8744$ 0.8307	$ 0.83
10+	$ 0.7848$ 0.7456	$ 7.46
30+	$ 0.7343$ 0.6976	$ 20.93
100+	$ 0.679$ 0.6451	$ 64.51
500+	$ 0.6546$ 0.6219	$ 310.95
1,000+	$ 0.6432$ 0.6111	$ 611.10
Standard Packaging2500/Full Reel

Better price for more quantity?

$

Type	Description	All
Category	Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufacturer	Tokmas
Packaging	DFN-8(8x8)
Drain to Source Voltage	650V
Output Capacitance(Coss)	27pF
Current - Continuous Drain(Id)	10A
Operating Temperature -	-55℃~+150℃
Gate Threshold Voltage (Vgs(th))	1.6V
Pd - Power Dissipation	75W
Technology	E-mode
RDS(on)	160mΩ
Reverse Transfer Capacitance (Crss@Vds)	0.4pF
Number	1 N-channel
Input Capacitance(Ciss)	83pF
Gate Charge(Qg)	2.3nC
Type	N-Channel